Driving Innovation Together: <span style='color:red'>NOVOSENSE</span>, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles
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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.
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Release time：2025-10-09 13:53 reading：306 Continue reading>>
<span style='color:red'>NOVOSENSE</span> launches NSUC1612: Fully Integrated Embedded Motor Drive SoC for Smarter, Cost-Efficient Automotive Actuators
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NOVOSENSE launches NSUC1612: Fully Integrated Embedded Motor Drive SoC for Smarter, Cost-Efficient Automotive Actuators

　　NOVOSENSE has released the NSUC1612, a next-generation motor driver SoC designed to address the limitations of traditional discrete solutions in automotive smart actuators, such as system complexity, high cost, and limited reliability.　　With its fully integrated single-chip architecture, the NSUC1612 can simplify design, reduce cost, and enhance stability. It supports a wide range of applications, including automotive water valves, automotive air-conditioning vent, active grille shutters, as well as stepper motors, DC brushed motors, and DC brushless motors—delivering an efficient and scalable solution for automotive electronics.　　1.Fully Integrated Architecture: Simplified Design, Reduced Complexity　　Conventional actuator control systems often require multiple components, including MCU, motor drivers, communication interfaces, and protection circuits, leading to complex PCB layout, increased solder joints, and compatibility issues.The NSUC1612 integrates a 32-bit ARM® Cortex®-M3 MCU with 4- or 3-channel half-bridge drivers, LIN/CAN controller communication interfaces, a 12-bit ADC, temperature sensors, and other essential modules, all in a single-chip. This eliminates the need for additional companion ICs while covering the full motor control, communication, and protection process.By reducing external components and simplifying hardware design, the NSUC1612 shortens development cycles and minimizes EMI risk through optimized internal signal routing.　　2.Excellent EMC Performance: Reliable Operation in Harsh Environments　　Automotive electronics operate in complex electromagnetic conditions where EMC performance directly impacts actuator precision and system stability. The NSUC1612 provides simplified reference circuits and optimized PCB layout. In compliance with CISPR 25:2021 Class 5, it passes stringent automotive EMC/EMI tests, compliant with the automotive standardsSelected Test Results Based on CISPR 25:2021　　This ensures stable motor control signals and helps prevent malfunctions such as actuator stalls or misoperation caused by electromagnetic interference.　　3.Strong Performance: Balanced Drive Capability and Processing Power　　The NSUC1612 is designed to deliver both reliable motor driving capability and efficient computation: NSUC1612B: 4 half-bridge outputs, peak current up to 500 mA NSUC1612E: 3 half-bridge outputs, peak current up to 2.1 AThese options support brushed DC, BLDC, and stepper motors across diverse applications, from HVAC air vent adjustment to seat ventilation.　　The ARM® Cortex®-M3 core with Harvard architecture integrates 32 KB Flash, 2 KB SRAM, and 15 KB ROM with Bootloader, supporting OTA upgrades. A 32 MHz high-precision oscillator with PLL ensures stable computation, while low-power sleep mode consumes less than 50 μA across the full operation temperature range, balancing performance with energy efficiency.　　4.Automotive-Grade Reliability: Built for Demanding Conditions　　The NSUC1612 is designed with comprehensive reliability features to withstand harsh operating environments. It is compliant with AEC-Q100 Grade 1, supporting junction temperatures up to 150°C and ensuring stable operation across a wide temperature range from -40°C to +125°C. The device’s LIN port can tolerate up to ±40 V, while the BVDD pin supports -0.3 V to 40 V, enabling direct connection to 12V automotive batteries. In addition, integrated protection mechanisms such as over-voltage and over-temperature safeguards provide robust defense against voltage fluctuations and transient surges, delivering system-level reliability under real-world automotive conditions.　　The NSUC1612 extends its value through broad application compatibility, making it suitable for automotive actuator systems. It supports brushed DC, BLDC, and stepper motors, while integrated communication interfaces—including LIN PHY (compliant with LIN 2.x, ISO 17987, and SAE J2602), FlexCAN, and SPI—allow seamless integration into existing automotive network architectures.　　The NSUC1612 is ideal for a wide range of applications, including thermal management components (e.g., automotive water valves and expansion valves), cabin comfort modules (automotive air-conditioning vent), and smart body systems (active grille shutters and charging port actuators). By integrating these functions into a single device, it helps reduce design costs and simplify development.
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Release time：2025-09-23 13:12 reading：464 Continue reading>>
Adapting to challenging magnetic environments: MT73xx 3D dual-output Hall latches from <span style='color:red'>NOVOSENSE</span> enable precise automotive motor control
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Adapting to challenging magnetic environments: MT73xx 3D dual-output Hall latches from NOVOSENSE enable precise automotive motor control

　　The NOVOSENSE MT73xx series dual-output Hall latches, based on 3D Hall technology, support SS (Speed & Speed) or SD (Speed & Direction) dual-channel outputs and complies with Automotive Grade 0 standards. Ideal for motor control systems such as power windows, liftgates, and sunroofs, this product family enhances the accuracy and stability of speed and position detection, optimizing overall in-vehicle comfort.　　In motor control systems, precise detection of speed and direction signals directly influences system response speed and operational stability. Traditional solutions typically rely on a combination of two separate Hall latches, requiring high magnetic ring installation precision. This often leads to issues such as signal phase deviation, poor synchronization, and structural complexity.　　Integrates a 3D Hall sensing structure with inherent orthogonal output characteristics, the MT73xx series can simultaneously deliver dual-channel speed signals (SS output) with a 90° phase difference or speed and direction signals (SD output), making it widely suitable for “speed-direction” detection applications. This design reduces dependency on precise positioning of magnetic poles, mitigates dual-channel phase deviation, simplifies system architecture, and improves overall system stability, providing a more flexible and reliable solution for motion control detection.　　Compatibility with diverse magnetic ring configurations enabled by VHS technology　　To achieve high-precision 3D sensing, the MT73xx series adopts NOVOSENSE’s proprietary VHS (Vertical Hall Sensor) technology. Through combinations of XY, YZ, and XZ axial sensing, any two axes naturally deliver orthogonal outputs, enhancing signal synchronization.　　Additionally, the MT73xx series offers excellent compatibility with various magnetic ring configurations – whether axial, radial, or irregularly shaped magnets – maintaining robust duty cycle performance. This allows customers to adapt designs flexibly depending on magnetic ring characteristics and installation environments, further reducing development complexity and tuning costs.　　Dual-output design for optimized system integration　　Regarding system integration, the MT73xx’s dual-output capability allows it to replace traditional single- or dual-Hall solutions by directly transmitting SS (Speed & Speed) or SD (Speed & Direction) signals to ECU, minimizing the requirements for peripheral redundant position sensors.　　This approach not only saves PCB space and simplifies structural layouts, but also enhances solution integration, offering greater design flexibility for innovative applications in motor control and intelligent cockpit systems.
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Release time：2025-08-13 15:35 reading：667 Continue reading>>
High-voltage half-bridge driver NSD2622N from <span style='color:red'>NOVOSENSE</span>: A high-reliability, high-integration solution tailored for E-mode GaN
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High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.
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Release time：2025-08-07 14:08 reading：702 Continue reading>>
<span style='color:red'>NOVOSENSE</span> Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability
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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.
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Release time：2025-07-14 14:25 reading：687 Continue reading>>
<span style='color:red'>NOVOSENSE</span> introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input
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NOVOSENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input

　　NOVOSENSE recently announced the launch of the NSDA6934-Q1, a digital-input automotive-grade Class D audio amplifier designed for vehicle audio systems. Featuring four-channel audio output with up to 75W per channel, it supports low-latency mode and sampling rates up to 192kHz. The amplifier offers flexible switching frequencies, multiple modulation options, and comprehensive protection features, making it highly adaptable to various automotive audio system designs.　　Class D amplifiers: Driving the evolution of automotive audio　　As automotive electronics continue to advance, Class D amplifiers have emerged as the preferred choice for vehicle audio systems due to their high efficiency, low heat dissipation, and compact form factor. These amplifiers not only meet modern vehicles’ stringent energy efficiency demands but also enhance audio quality and power output within limited space, playing a key role in the evolution of automotive audio technology.　　Optimized Low-Latency Mode: Reducing Path Delay by Over 70%　　In automotive audio systems, amplifiers boost signals from the DSP (Digital Signal Processor) before transmitting them to the speakers. Traditional amplifiers can contribute to over 30% of total signal transmission latency, impacting system performance.　　The NSDA6934-Q1 features a unique low-latency mode that reduces transmission path delay by more than 70%, granting the DSP additional time for signal processing. This reduces DSP resource demands and enhances the effectiveness of RNC (Road Noise Cancellation). Additionally, the amplifier supports up to 192kHz sampling rates, delivering high-resolution audio with enhanced clarity and detail for an immersive in-car listening experience.　　Flexible Configurations to Suit Various Designs　　The NSDA6934-Q1 provides a wide range of switching frequencies and modulation options, allowing system engineers to optimize efficiency and size.　　Adjustable Switching Frequency (384kHz – 2.1MHz)　　At 384kHz, the amplifier achieves up to 93% efficiency, ideal for applications prioritizing power savings, though it requires a 10μH inductor for operation.　　At 2.1MHz, the amplifier supports a compact 3.3μH inductor, making it suitable for space-constrained smart cockpit integration.　　Selectable Modulation Modes (BD Mode & 1SPW Mode)　　BD Mode (50% duty cycle) ensures superior linearity at high power levels, making it ideal for high-output applications.　　1SPW Mode (20% duty cycle) reduces conduction losses, improving efficiency in low-power scenarios　　Additionally, the NSDA6934-Q1 supports TDM16 data format, ensuring seamless integration with mainstream audio interfaces. With eight selectable I2C addresses, it prevents communication conflicts among peripheral devices. It also features integrated PVDD voltage monitoring, eliminating the need for external resistor dividers and simplifying system wiring and debugging.　　Enhanced EMC Performance & Comprehensive Protection　　The NSDA6934-Q1 incorporates multiple EMC optimization techniques, including slew rate control, phase control, and three spread-spectrum modes (triangular wave, random spread, hybrid spread), helping customers pass system-level EMC tests efficiently.For system reliability, the amplifier integrates multiple intelligent protection and diagnostic functions, including:　　• I2C watchdog for real-time bus monitoring.　　• Thermal protection, which automatically reduces gain under high-temperature conditions.　　• AC/DC diagnostics for real-time power supply monitoring.　　• Comprehensive protection suite, including temperature alarms, over-temperature shutdown, undervoltage, overvoltage, and overcurrent protection, ensuring robust system stability.
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Release time：2025-04-24 17:19 reading：871 Continue reading>>
Supporting up to 1500W motor drive, NSUC1602 from <span style='color:red'>NOVOSENSE</span> easily addresses high current challenges
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Supporting up to 1500W motor drive, NSUC1602 from NOVOSENSE easily addresses high current challenges

　　NOVOSENSE announced the launch of NSUC1602, a high-integration embedded motor control IC, following its introduction of NSUC1610, a small motor driver SoC for automotive applications in early 2023. Compared to the single-chip NSUC1610 that integrates LIN and MOS power stages, NSUC1602 as a SoC, supports an external independent power MOSFET design. This innovative approach enables it to effortlessly address applications requiring higher current.　　In addition, NSUC1602 integrates three half-bridge pre-drivers, expanding the motor control power range to 20W-1,500W. This enhancement not only further optimizes the control performance of BLDC motors, but also better meets the requirements of applications with higher power output. In the realm of xEV, thermal management systems are particularly complex and crucial for ensuring overall vehicle performance. These systems are responsible for managing the temperatures of electric motors, power electronics, and battery, while ensuring optimal comfort for passengers in the cabin. An efficient thermal management system not only helps extend battery life, but also prevents the risks of thermal runaway caused by overheat, thereby safeguarding safe operation of xEVs.　　In the realm of xEV, thermal management systems are particularly complex and crucial for ensuring overall vehicle performance. These systems are responsible for managing the temperatures of electric motors, power electronics, and battery, while ensuring optimal comfort for passengers in the cabin. An efficient thermal management system not only helps extend battery life, but also prevents the risks of thermal runaway caused by overheat, thereby safeguarding safe operation of xEVs.　　To achieve these objectives, thermal management systems rely heavily on precise control of various actuators, such as electric compressor, electronic water pump, oil pump, fan motors, valves, and HVAC control modules. The motors driving these actuators typically need high power output to ensure stable and precise performance under a wide range of operating conditions, thereby meeting the strict requirements of efficient and accurate control for xEV thermal management systems.　　NSUC1602, a highly integrated embedded motor control IC from NOVOSENSE, plays a pivotal role in managing key actuators in xEVs with its exceptional integration features and powerful motor control algorithms. This IC integrates an ARM® Cortex®-M3 core and efficient three-phase pre-driver circuits, and supports more advanced and complex motor control algorithms, such as FOC sensored or sensorless vector control. These advanced algorithms significantly enhance the precision and efficiency of temperature management for motors and electronic devices, providing robust technical support for intelligent three-phase brushless DC motor control applications, including automotive electronic cooling fans and electronic water pumps. Additionally, NSUC1602 incorporates a series of optimization designs to significantly improve overall system efficiency, ensuring stable performance under high-load operating conditions.　　NSUC1602 meets the reliability requirements of AEC-Q100 Grade 0, and operates stably at extreme temperatures (up to 175°C wafer junction temperature). This SoC comes with further enhanced built-in diagnostics and protection functions that ensure high system reliability and comprehensive security protection for users.　　While maintaining a highly integrated design, NSUC1602 also has an optimized power management solution. The LIN port supports ±40V reverse voltage protection, and the BVDD pin supports a withstand voltage range from -0.3V to 40V, allowing direct power supply from a 12V automotive battery. This helps simplify system design and notably reduce development costs.　　NSUC1602 demonstrates extensive applicability for diverse applications. With superior motor control performance, NSUC1602 can play a crucial role in a wide range of BLDC and BDC applications requiring precise temperature control and efficient power transmission, such as automotive electronic water pumps, cooling fans, air conditioning blowers, seat adjustment, sunroof control, or tailgate control. Its optimized power management solution ensures that these devices achieve significant energy consumption reduction and substantial service life extension, while providing exceptional performance.
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Release time：2025-04-07 13:29 reading：1028 Continue reading>>
<span style='color:red'>NOVOSENSE</span> Achieves ISO 26262 ASIL D
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NOVOSENSE Achieves ISO 26262 ASIL D "Defined-Practiced" Certification, Reinforcing Automotive Safety Leadership

　　NOVOSENSE Microelectronics today announced it has earned the ISO 26262 ASIL D "Defined-Practiced" certification from TÜV Rheinland, a significant milestone validating the company's robust functional safety management system.　　This achievement confirms NOVOSENSE's successful implementation of functional safety practices in critical automotive applications, including ABS wheel speed sensors and isolated gate drivers. Moving from the "Managed" (system establishment) to the "Defined-Practiced" (system implementation) level signifies a major leap in NOVOSENSE's functional safety capabilities and underscores the maturity of its research and development (R&D) and quality management systems.　　Transitioning from Compliance to Real-World Application　　Since securing the ISO 26262 ASIL D "Managed" certification in December 2021, NOVOSENSE has focused on refining its R&D processes and strengthening its functional safety management. TÜV Rheinland's comprehensive audit assessed various aspects, including functional safety lifecycle management, safety culture, and R&D proficiency. The review specifically examined the practical application of these systems in NOVOSENSE's NSM41xx series wheel speed sensors and the NSI6911 isolated gate driver, confirming the company's systems meet the stringent "Defined-Practiced" standard.　　Key Product Highlights:　　• NSM41xx Series ABS Wheel Speed Sensors: These AMR-based sensors, designed to ISO 26262 ASIL B (D) standards, support ASIL D system-level functional safety. They offer precise wheel speed monitoring for critical systems like ABS, ESP, and EPS, ensuring reliability in demanding conditions. These are currently in mass production.　　• NSI6911 Isolated Gate Driver: Designed for new energy vehicle (NEV) main drives, this ASIL D-compliant driver features a 12-bit high-precision ADC, advanced diagnostics, and an SPI programmable interface. It provides robust driving and protection for SiC MOSFETs and IGBTs, ensuring NEV safety. Samples are now available.　　Commitment to Automotive Excellence　　Automotive applications remain a core focus for NOVOSENSE, driving the company to uphold its "Robust & Reliable" values. Building strong functional safety capabilities is a strategic priority, supported by a comprehensive ISO 26262:2018-compliant development process and a rigorous automotive-grade quality management system.　　As of 2024, NOVOSENSE has shipped over 500 million automotive chips, with automotive business representing more than 35% of its total revenue. Its products are trusted by leading NEV OEMs and Tier-1 suppliers.　　NOVOSENSE aims to be a preferred chip supplier in the global automotive supply chain. Through its strong R&D, reliable quality assurance, proven mass production, and flexible customization, NOVOSENSE delivers high-quality, high-reliability, and high-performance analog and mixed-signal chips, along with comprehensive system-level solutions.
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Release time：2025-03-20 09:57 reading：2351 Continue reading>>
With 16-bit PWM dimming and 4-channel LED drivers, NSUC1500 from <span style='color:red'>NOVOSENSE</span> redefines cockpit experience
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With 16-bit PWM dimming and 4-channel LED drivers, NSUC1500 from NOVOSENSE redefines cockpit experience

　　NOVOSENSE announced the addition of a new member to its NovoGenius product family - NSUC1500-Q1, a highly integrated ambient lighting driver SoC product.　　Integrating an ARM® Cortex®-M3 core and 4-channel high-precision current-mode LED drivers, NSUC1500-Q1 provides 16-bit independent PWM dimming and 6-bit analog dimming capabilities, and enables more accurate dimming and color mixing control while effectively compensating for lumen depreciation. Additionally, NSUC1500-Q1 is compliant with the AEC-Q100 Grade 1 and CISPR 25 Class 5 EMC standards, promising high reliability and flexibility.　　This innovative product allows opportunities to develop more efficient and creative smart cockpit lighting solutions that provide users with more superior visual experience.　　With continuous advancements of automotive personalization and innovation, vehicles of the future will be more than a means of transportation, but a mobile living space full of human touch and intelligence. The rapid evolvement of smart cockpits has further stimulated strong demand for more intelligent and comfortable driving experience from end-users. In this context, the creation of in-vehicle atmosphere is increasingly valued, as users expect to enhance the sense of immersion and emotional connection experience in the overall cabin through the integration and interaction between the ambient lighting system and other cockpit applications.　　The role of cabin ambient lighting is also quietly transforming. It goes beyond the traditional lighting and decoration functions, and has become a core element in enhancing the driving experience. By integrating personalized customization, intelligent response to driving conditions, and enhanced interactive features, the ambient lighting system can greatly improve the sense of immersion and ownership for drivers and passengers, creating a unique driving atmosphere for each individual.　　The NSUC1500-Q1, a highly integrated ambient lighting driver SoC, comes with an ARM® Cortex®-M3 processor core and four LED driver circuits. It also integrates high-precision constant current source, signal control, and LIN interface. These components work together to enable precise current control for each LED, and provide a perfect solution that answers complex and changing ambient lighting design requirements. Additionally, it supports flexible regulation of numerous LEDs. With internal high-precision PWM signals, NSUC1500-Q1 delivers exceptionally smooth dimming and color mixing effects. It also effectively compensates for brightness decay in RGB ambient lights due to temperature fluctuations and long-time aging, thereby ensuring consistent and outstanding lighting effects.　　High system reliability and effective protection mechanisms　　NSUC1500-Q1 is a good performer in system reliability, meeting the stringent reliability requirements of AEC-Q100 Grade 1. It also comes with advanced SoC-level LED diagnostics and protection functions. These design features significantly bolster the overall system reliability, and ensure stable operation of the ambient lighting system in a wide range of complex environments, thus delivering a more reassuring and dependable driving experience for users.　　Outstanding electrical properties and application flexibility　　In terms of electrical properties, NSUC1500-Q1 demonstrates exceptional adaptability and flexibility. Its LIN port provides reverse voltage withstand range from -40V to 40V, ensuring reliable operation in high-stress electrical environments. The BVDD pin supports a wide withstand voltage range from -0.3V to 40V, allowing it to directly use 12V power from the automotive battery. This greatly simplifies the system design process and significantly enhances the application flexibility.　　Integrated high-precision ADC for enhanced signal processing capability　　NSUC1500-Q1 integrates a high-performance 12-bit SAR ADC, providing more precise signal processing support for ambient lighting drivers. In the single-ended mode, its differential non-linearity (DNL) is controlled between -1LSB and +0.8LSB, and its integral non-linearity (INL) is maintained in the range from -1.1LSB to +1.1LSB, ensuring high accuracy and stability in signal processing. In the differential-ended mode, the DNL and INL of NSUC1500-Q1 can range from -0.8LSB to +0.8LSB, enabling smoother and more refined color transitions and brightness adjustments even in complex lighting scenarios.　　Ultimately streamlined BOM for significant cost reduction　　With an ultimately streamlined BOM, NSUC1500-Q1 from NOVOSENSE brings significant cost efficiency enhancement and design optimization for ambient lighting systems. Apart from the ambient lighting LEDs, its peripheral circuit requires only five components: three capacitors, one ferrite bead, one reverse protection diode, and an optional Transient Voltage Suppressor (TVS) diode. This streamlined BOM design markedly reduces system costs, and allows a smaller PCB footprint, helping achieve an optimal balance between system cost and performance.　　Excellent EMC performance and shortened design cycle　　NSUC1500-Q1 from NOVOSENSE offers reference designs for ambient lighting, with optimized EMC (Electromagnetic Compatibility) and thermal management performance. NSUC1500-Q1 has successfully undergone and passed all automotive EMC/EMI tests according to the CISPR 25: 2021 standard, meeting the most stringent Class 5 requirements. Its outstanding EMC performance ensures stable operation even in complex electromagnetic environments. In addition, the reference designs tailored for specific applications are carefully optimized and well answer customer needs, thereby shortening the design cycle and saving valuable time and resources for customers.　　Cortex-M3 core for enhanced scalability　　NOVOSENSE NSUC1500-Q1 is equipped with an Arm® Cortex®-M3 core, and offers rich scalability, including memory and package options. This not only allows flexible platform development, but also provides a highly cost-effective solution for ambient lighting applications.　　Key features of NSUC1500-Q1　　- 32-bit ARM® Cortex®-M3　　- 32 KB Flash, 2 KB SRAM, 2 KB EEPROM, 15KB ROM with integrated UDS bootloader　　- On-chip high-precision oscillator with a main frequency of 32 MHz　　- 35 kHz low-power and low-speed clock　　- Operating voltage range from 6.0V to 28V　　- 4-channel high-precision current-mode LED drivers, with a maximum drive current of 64 mA　　- Supporting 16-bit independent PWM dimming and 6-bit analog dimming　　- 1-channel 12-bit high-precision ADC with a sampling rate of up to 1.5Msps　　- LIN PHY supporting LIN 2.x standards and SAE J2602　　- Supporting various fault diagnostics capabilities, such as LIN diagnostics, RGB diagnostics, and supply voltage monitoring, as well as thermal shutdown functionality　　- Typical power consumption in sleep mode at 20μA　　- Compliant with AEC-Q100 Grade 1　　- Available in QFN20/SOP8/HSOP packages
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Release time：2025-03-14 09:57 reading：942 Continue reading>>
Leading Performance for High Voltage Applications: <span style='color:red'>NOVOSENSE</span> Launches the NSI67X0 Series of Smart Isolated Drivers
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Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers

　　NOVOSENSE has officially launched the NSI67X0 series of smart isolated drivers with Isolated Analog Sensing function. Suitable for driving power devices such as SiC, IGBTs and MOSFETs, and available in both automotive (AEC-Q100 compliant) and industrial variants, this series can be widely used in new energy vehicles, air conditioners, power supplies, photovoltaics and other applications.　　This series of isolated gate drivers equates an isolated analog to PWM sensor, which can be used for temperature or voltage detection. The design further enhances driver versatility, simplifies system design, effectively reduces system size and lowers overall cost.　　High-voltage Drive and Ultra-high Common-mode Immunity　　Designed to drive IGBTs or SiC up to 2121V DC operating voltage, NSI67X0 offers advanced protection functions, excellent dynamic performance, and outstanding robustness. This series uses SiO2 capacitor isolation technology to isolate the input side from the output side, providing ultra-high common-mode immunity (CMTI>150kV/μs) while ensuring extremely small offset between devices, which is at the leading level in the industry.　　Powerful Output Capability and Miniaturized Package　　The NSI67X0 series has powerful output capability, supporting ±10A drive current and a maximum output drive voltage of 36V, far exceeding most similar products. Its SOW16 package design further enhances safety by achieving a creepage distance of more than 8mm while maintaining miniaturization.　　Comprehensive Protection Functions and Automotive Certification　　With comprehensive protection functions, including fast overcurrent protection, short-circuit protection, fault soft turn off, 4.5A Miller clamp, and undervoltage protection, this series is a reliable choice for driving power devices such as IGBTs. The entire product family meets the AEC-Q100 standard for automotive applications and can be widely used in new energy vehicles, industrial control and energy management.　　Features of NSI67X0 Series　　◆ Smart isolation drivers up to 2121Vpk for driving SiC and IGBTs　　◆ High CMTI: 150 kV/μs　　◆ Input side supply voltage: 3V ~ 5.5V　　◆ Driver side supply voltage: up to 32V　　◆ Rail-to-rail output　　◆ Peak source and sink current: ±10A　　◆ Typical propagation delay: 90ns　　◆ Operating ambient temperature: -40°C ~ +125°C　　◆ Compliant with AEC-Q100 for automotive applications　　◆ RoHS compliant package type: SOW16, creepage distance > 8mm　　Protection Functions　　◆ Fast over-current and short-circuit protection, with optional DESAT threshold voltage of 9V and 6.5V and OC threshold voltage of 0.7V　　◆ Integrated soft turn off function in case of fault, with optional soft turn off current of 400mA and 900mA　　◆ Integrated Miller clamp function, with clamp current up to 4.5A　　◆ Independent undervoltage protection UVLO on both HV and LV sides　　◆ Fault alarm (FLT/RDY pin indication)　　Isolated Analog Sampling Function　　◆ Isolated analog sampling function　　◆ AIN input voltage range: 0.2V ~ 4.7V　　◆ APWM output duty cycle: 96% ~ 6%　　◆ Duty cycle accuracy: 1.6%　　◆ APWM output frequency: 10kHz　　◆ Optional AIN integrated constant current source output　　Safety Related Certification　　◆ UL Certification: 1 minute 5700Vrms　　◆ VDE Certification: DIN VDE V 0884-11:2017-01　　◆ CSA Certification: Approved under CSA Component Acceptance Notice 5A　　◆ CQC Certification: Compliant with GB4943.1-2011　　Introduction to Principle of High-precision Temperature Sampling of NSI67X0 Series　　The AIN interface of the NSI6730 has a built-in 200uA current source. When an external NTC is connected, a voltage drop will be generated and demodulated into a 10kHz PWM signal for isolated output. The PWM signal is captured by the processor MCU, and the corresponding voltage value and temperature are obtained by calculating the duty cycle.　　When the AIN voltage is in the range of 0.2V ~ 4.7V, the AIN input voltage and APWM output duty cycle are linearly related. When the AIN voltage is converted to a PWM signal, the PWM duty cycle conforms to the following formula:　　That is, the AIN voltage of 0.2V ~ 4.7V corresponds to a PWM duty cycle of 96% ~ 6%.　　Model Selection Chart of NSI67X0 Series　　This series offers a variety of models to meet the needs of different applications. Specifically, in the NSI67X0 series, when X is 3, the AIN interface integrates a constant current source; when X is 7, the AIN interface does not integrate a constant current source.
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Release time：2025-02-24 16:18 reading：1082 Continue reading>>

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